Investigation of material gain of InGaAs/InGaAsP/InP lasing heterostructure

In this paper, we have studied a step index separate confinement heterostructure (SCH) based InGaAs/InGaAsP/InP lasing heterostructure on InP substrate consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization modes. The overall size of the STIN-SCH based lasing heterostructure including single quantum well along with barriers and claddings is 230nm. In order to support the obtained material gain, the anti-guiding factor for InGaAs/InGaAsP/InP lasing heterostructure has also been discussed. This lasing heterostructure may be very useful for optical fiber communication systems due to minimum optical losses and less attenuation.