Analysis of GaN-HEMTs switching characteristics for power applications with compact model including parasitic contributions

In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from the device's field plate (FP) structure. The capabilities of the reported model are demonstrated by reproduction of the measured power efficiency of a boost converter circuit, enabled through separate extraction of the parasitic FP contributions. In addition, physical trap-density modeling is verified to be also of key importance for accurate prediction of the power efficiency.