Total Ionizing Dose Effects in Hydrogen Sensors Based on MISFET

Total ionizing dose effects in hydrogen sensors based on metal-insulator-semiconductor field-effect transistor (MISFET) were investigated in this paper. The experimental results of influence electron irradiation on MISFET based on Pd-Ta
₂
O
₅
-SiO
₂
-Si structure are presented. The models of hydrogen and radiation sensitivities of MISFET threshold voltage and electrical characteristics have been developed. These models can be used to interpret the experimental data, to estimate the critical doses and to forecast the performance of the hydrogen MISFET-sensors under action of ionizing radiation.