The bipolar junction diode (BJD)-a new power diode concept

In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept.