High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing

Germanium n
⁺
/p junctions with high phosphorus dopant activation (>1020 cm
^-3
) and minimal dopant diffusion were achieved by P implantation and laser spike annealing (LSA) at temperatures ≥794 °C for 400 μs. In addition, there is no evidence of any residual extended defectivity near the junction after LSA. The effect of F co-doping was also investigated, demonstrating the reduction in both diffusion and activation. The thermal stability and electrical characteristics of Ge n
⁺
/p junction activated by LSA were evaluated.