An S-band 350W internally matched solid-state power amplifier using GaN power HEMTs

An S-band power amplifier was successfully developed with internally matched three 19.2mm AlGaN/GaN high electron mobility transistors (HEMTs). The lumped components, quasi-microwave monolithic integrated circuits (MMICs) together with microstrip divider/combiner were used to realize the input and output matching networks. Under the pulsed condition (200us, 20%), the developed GaN HEMTs power amplifier delivers more than 350W output power, and the PAE of above 52.4% during the operation frequency band from 3.1 to 3.5GHz with 36V drain bias voltage, and a maximum 380W saturated output power with 11.5dB power gain and 58.7% maximum power-added efficiency (PAE) are achieved.