Low noise silicon RF FET design using graded doping and stress

This work builds on a new approach to noise phenomena in semiconductor devices developed by the authors (see IEEE IEDM Tech. Dig., Dec. 1997) and named the Ergodic Method. Two suggestions provided by the Ergodic Method are use of graded doping profiles in the channel and stress to design low noise silicon FETs. Experimental evidence is presented to support these predictions. RF graded channel Si MOSFETs, and Si on SiGe MOSFETs were used in the current noise performance measurements.