Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium Oxide

In this letter, dissolvable and biodegradable resistive switching devices with a cell structure of Mg/MgO/Mg were demonstrated. Electrical tests demonstrated good memory characteristics for nonvolatile application. The dissolution rate of Mg and MgO is characterized in deionized (DI) water and in phosphate-buffered saline solution, with clear difference, 0.36, 1.25, 0.057, and 0.13 nm/s, respectively. The Mg/MgO/Mg devices on silk fibroin substrates are able to be completely dissolved as fast as 30 min while immersed in DI water. The Mg/MgO/Mg devices have excellent prospects for the applications in transient electronics, secure memory systems, and implantable medical therapy devices.