Properties of SiGe microcrystals in strong magnetic fields for thermoelectric sensors

Studies of the effects of strain and elemental composition on thermoelectric properties of SiGe microwires for sensor applications at the influence of strong magnetic fields have been performed. Magnetoresistance of compressed samples was substantially suppressed in comparison with their unstrained counterparts. The Seebeck coefficient for both kinds of SiGe wires remained weakly dependent on magnetic field intensity. Magnetic effects on transport properties of SiGe promoted with increase of Ge content in solid solution. Assessments of applicability of the developed thermoelectric sensors of temperature at strong magnetic fields were performed.