Detection of terahertz radiation by array of integrated field-effect transistors with floating electrodes

Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electron plasma oscillations in the common channel of the FETs array. Voltage responsivities obtained by the array of FETs with floating electrodes surpass the photoresponse reported for the array of FETs connected in series by external wiring.