On/off ratio tuning of Schottky Barrier CNTFETs based on quantum simulation approach

Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFETs limitations. In this paper we have studied the effect of scaling of Schottky Barrier CNTFET (SB_CNTFET) insulator thickness (tox), high k dielectric materials, Gate length (LG), L
_G
/tox Ratio and Schottky Barrier height on current-voltage characteristics of SB_CNTFET. The device metrics such as drive current (Ion), leakage current (Ioff) and Ion/Ioff ratio studied in this paper. The simulation results show the Ion/Ioff Ratio decreased with using Low k dielectric materials, Gate length (L
_G
<;15nm & L
_G
>40nm), LG/tox Ratio (Less than 18), too with increasing the insulator thickness and Schottky Barrier height.