Memristive nanodevices: CMOS compatibility and novel applications

Memristive devices are promising nanoelectronic components for the next generation non-volatile memory and unconventional computing. As they are most likely be used together with CMOS platform, it is important to develop CMOS compatible memristive devices in terms of materials, processes, and most importantly, electrical performance. In this paper, we first introduce our efforts towards low-voltage fully CMOS compatible memristive devices. Devices based on HfO
₂
, tantalum doped SiOx, and purely SiO
₂
switching layers are discussed. We then present a self-rectifying p-Si/SiO
₂
/n-Si device that is fabricated using a room-temperature fluid-supported single-crystal silicon membrane transfer technique. Finally, we demonstrate a novel application of memristive devices as radiofrequency (RF) switches that have low insertion loss, high isolation and an average cutoff frequency of 35 THz.