$400~\mu $ m Diameter APD OEIC in $0.35~\mu \text{m}$ BiCMOS

An optoelectronic integrated circuit (OEIC) with a 400 μm diameter avalanche photodiode (APD) is present. The OEIC is designed for use in systems of optical wireless communication and communication over plastic optical fiber. The used APD reaches a quantum efficiency of 81.7% without an anti-reflection coating. In combination with the 0.35 μm bipolar complementary metal-oxide-semiconductor circuit, a data rate of 2 Gb/s can be reached with a sensitivity of -30.6 dBm (bit error rate 10
^-9
) at a wavelength of 675 nm. The OEIC occupies an area of 960 μm × 1540 μm and is supplied with 3.3 V with a current consumption of 74 mA.