An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells

An InGaN/GaN solar cell including a dual multiple quantum wells (MQWs) structure is investigated. It shows an obvious advantage over the conventional InGaN/GaN cell, which only contains a single MQWs structure. Because the short current density (J
_SC
) increases, the 1 sun power conversion efficiency significantly improves from 0.62% (single MQWs cell) to 1.02% (dual MQWs cell). From the measurement of EQE and PL spectra, the enhancement of effective photoelectric response within the solar spectrum mainly contributes to the high device performance, due to the introduced upper MQWs of higher In content.