Characterization Of Ion Beam Damaged Photovoltaic Devices

Transport and diode measurements of low energy Ar + ion bombarded doped and semi-insulating LEC GaAs are presented. Distinct changes caused by ion etchin in semi-insulating GaAs are an increase in photo-sensivity, and a persistent photoconductivity, which are not evident in the unetched material. Increase in Schottky diode ideality factor and reverse saturation current are indicative of the formation of a partly amorphous and damaged surface layer. A correlation between transport and diode characteristics and detailed photoconductive and photovoltaic device characterization, are presented.