Characterization of Graphene TFET for Subterahertz Oscillator

This paper presents the frequency and output power characteristics of oscillators in the graphene tunneling FETs (GTFET) technology. In order to acquire these characteristics, the practical operating conditions of GTFET oscillators are carefully analyzed, and then, the device parameters are simplified to an equivalent circuit and the I/V large signal model is approximated by a compact form. Expressions for the maximum oscillation frequency, maximum output power, and the relationship between frequency and power are given combing the equivalent circuit and the simplified model. In addition, the key device parameters that can be used to improve the performance of a GTFET oscillator are also discussed.