Test structures of LASCR device for RF ESD protection in nanoscale CMOS process

The test structures of inductor-assisted silicon-controlled rectifier (LASCR) are investigated in this work to protect the radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages. Verified in silicon chip, the LASCR with the assistance of inductor can provide both good ESD robustness and RF performances. With the better performances, the LASCR is very suitable for gigahertz RF applications.