Integration processes of (Ba,Sr)TiO/sub 3/ capacitor for 1 Gb and beyond [DRAMs]

A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and the contact between the BST and the barrier. The electrical properties of MOCVD BST capacitor in 3-dimensional structure were investigated.