Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak f/sub T/ (f/sub MAX/) values up to 65 (90) GHz, and ring oscillator delays down to 16ps. Excellent static parameters like (I/sub B/-driven) Early voltage-current gain products of >20000 V are also demonstrated.