Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics

We have statistically analyzed 28800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N/sub 2/O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N/sub 2/O nitridation and is very promising for the reduction of bit failures.