Sub-Fin solid source doping in the 14nm and sub-14 FinFET device

The FinFET device shows well Gate control ability on the channel charge beyond the 14nm and sub-14nm node due to superior electrostatic control ability. The Sub Fin Bottom punch through is a major concern for the 14nm and sub-14nm FinFET device. The high dose punch through stop IMP is popularly used to control the Fin Bottom punch through, but it suffered Fin damage and device performance degradation. Thus, in this paper, a new channel stop method of Solid Source Doping (SSD) was investigated because of its better doping profile control, lower Fin damage. In this paper we reported the SSD SIMS data both on the blanket wafer and the structure wafer, and the Dopant profile result comparison between the IMP and the SSD method based on the TCAD, verified the reliability and advantage of SSD.