Development of 250W EUV light source for HVM lithography

We have been developing CO
₂
-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL since 2003. Unique original technologies such as; combination of pulsed CO
₂
laser and Sn droplets, dual wavelength laser pulse shooting and mitigation with magnetic field have been developed in Gigaphoton Inc. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. We demonstrated 108W EUV power (I/F clean in burst), 80 kHz, 24 hours stable operation at Proto#2 device. Based on these experimental data we are now constructing first practical source for HVM; "GL200E-Pilot# 1 ". Target of this device is 250 W EUV power by 27 kW pulsed CO2 driver laser system.