Process- and geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMICs in the 5-22 GHz range

Statistical transistor and transmission line models are developed and verified on Si bipolar and SiGe HBT technologies through 22 GHz. Universal best/worst process files are defined using principal component analysis and verified on the high frequency performance of transistors, CML delay chains, 5.8 GHz cascode LNA (NF=2 dB, G=10 dB, P/sub diss/=9 mW) and broadband amplifier (G=9 dB, B/sub 3dB/=22 GHz, S/sub 11/<-20 dB, NF=6 dB, P/sub 1dB/=12.5 dBm, group delay ripple<8 ps).