Highly reliable liquid-phase deposited SiO/sub 2/ with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFTs

Low temperature (/spl sim/300/spl deg/C) N/sub 2/O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N/sub 2/O-treated LPD-SiO/sub 2/ improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFTs, which reveal excellent characteristics and reliability. It is believed that the N/sub 2/O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.