Quasi-3D device simulation for microwave noise characterization of MOS devices

We report a quasi 3-D MOS noise simulation method which accurately predicts the microwave noise performance of MOS transistors. This method inherently takes into account all the microscopic noise sources within the transistor at microwave frequencies. A 0.5 /spl mu/m LDD nMOS transistor was simulated and the simulation results were compared to measurement data. The behavior of the microwave noise parameters (i.e. F/sub min/, R/sub opt/, X/sub opt/, and R/sub n/) with bias and layout parameters are also presented.