High-Temperature Voltage and Current References in Silicon Carbide CMOS

This paper presents a pair of high-temperature voltage and current references that have been designed in a silicon carbide CMOS process. The circuits presented have been fabricated in two fabrication runs and tested to 300 °C under probe and 540 °C in a packaged form. Test results over a single wafer at multiple sites are given to provide variation over process data. The circuits include a voltage reference with an accuracy of better than 100 ppm/°C and a constant current reference with a variation of ±1 μA at a nominal output of 11 μA from 25 °C to 540 °C.