Graphene oxide and TiO2 nano-particle composite based nonvolatile memory

We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO
₂
nano-particles as its resistive switching layer. The efficient physi-(or chem-) sorption of TiO
₂
endows the GO/TiO
₂
composites with superior bipolar resistive switching behaviors, including low switching voltage (about ±1V), tight distributions of HRS and LRS, long retention of more than 10
⁴
s and steady endurance performances, which is superior than GO device. The mechanism of conduction and resistance switching are studied.