Wideband Steady-State Model of a Strained InGaAsP MQW-SOA

A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.