First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

This letter reports on the first demonstration of microwave power performance at 10 GHz on flexible AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at V
_GS
= 0 V and a peak extrinsic transconductance of 293 mS/mm are obtained for a 2 × 50 × 0.1 μm
²
flexible device. At V
_DS
= 5 V, a continuous-wave saturation output power density of 0.42 W/mm is achieved at 10 GHz, and associated with a maximum power-added efficiency of 29.8% and a linear power gain of 15.8 dB. The device exhibits an intrinsic current gain cutoff frequency F
_T
of 38 GHz and a maximum oscillation frequency F
_MAX
of 75 GHz. This result demonstrates the capability of flexible GaN-based HEMT for the development of applications requiring mechanical flexibility, high frequency operation, as well as high power performance.