Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes

We report the experimental data, quantum-mechanical calculations, and engineering-level modeling that provide insight into the atomic-scale processes that underlie the hot-electron degradation of AlGaN/GaN high-electron-mobility transistors during electrical stress at moderate drain bias. There is relatively large degradation (up to 20%) of the peak transconductance (g
_m
) in the semi-ON state, along with a small shift of the threshold voltage (V
_T
). The V
_T
shift and g
_m
degradation increase with temperature. A model of the degradation is presented, based on the hot-carrier-induced defect generation. The model considers carrier energy distributions for different temperatures obtained using an ensemble Monte Carlo (EMC) approach. The Ensemble Monte-Carlo results show that the concentration of energetic carriers is maximum at the end of the gate on the gate-drain access side in the semi-ON state of operation. The degradation is directly related to the number of carriers with sufficient energy to generate defects, and the carrier energy distribution depends strongly on the device temperature. The first-principles density functional theory calculations and the analysis suggest that the dehydrogenation of substitutional iron and its complexes is the dominant cause of the observed degradation in these devices.