15.5 A 930mW 69dB-DR 465MHz-BW CT 1-2 MASH ADC in 28nm CMOS

The width of RF bands commonly used for cellular telecommunications has grown from 35-to-75MHz for 2G/3G/4G platforms to 100-to-200MHz for today's LTE, and the desire for relaxed image-rejection filtering has pushed the direct IF sampling frequencies to 300+ MHz. This paper presents a continuous-time (CT) multi-stage noise-shaping (MASH) ADC IC that achieves 69dB of DR over a 465MHz signal bandwidth with a combined power consumption of 930mW from ±1.0V/1.8V supplies. The ADC IC is implemented in 28nm CMOS and achieves a peak SNDR of 65dB, a small-signal noise-spectral density (NSD) of −156dBFS/Hz, and a figure-of-merit (FOM) of 156dB over a signal bandwidth of 465MHz.