DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT

In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current. The innovative MOS-HEMT technique reduces the leakage current.