Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation

Monolayer-Si-passivated Ge nFETs with high electron mobility (175 cm
²
/Vs at Ns=5×10
¹²
cm
^-2
) and superior PBTI reliability (max. V
_ov
= |V
_g
-V
_th
| of 0.28V at 125°C) at 0.95-nm-EOT are demonstrated on a 300 mm Si wafer platform. The electron mobility is increased by optimizing the Si thickness while significant improvement in PBTI reliability is realized by band engineering using La-induced interface dipole and defect passivation using laser annealing. This is a significant step forward for the introduction of Ge nFET as high mobility device in advanced technology nodes.