High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron

We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr
_0.7
Ca
_0.3
MnO
₃
(PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO
₂
based Insulator-Metal Transition (IMT) oscillator was developed for neuron application. Finally, we have experimentally confirmed the realization of pattern recognition with high accuracy using the 11k-bit Mo/PCMO synapse array and NbO
₂
oscillator neuron.