Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Developing high performance self-selective cell (SSC) is one of the most critical issues of the integration of 3D vertical RRAM (V-RRAM). In this work, a four-layer V-RRAM array, with high performance HfO
₂
/mixed ionic and electronic conductor (MIEC) bilayer SSC, was demonstrated for the first time. Several salient features were achieved, including ultra-low half-select leakage (<;0.1 pA), very high nonlinearity (>10
³
), low operation current (nA level), self-compliance, high endurance (>10
⁷
), and robust read/write disturbance immunity.