Nonlinear and Damage Properties of BJT Injected With Microwave Pulses

The nonlinear and damage properties of silicon bipolar junction transistors (Si BJTs) injected with microwave pulses (MWPs) from base are studied in this paper. The experimental results of this injection research show that the feature of the output power of the Si BJT is from linear increase, saturation, reduction to increase again as the input power increases; the feature of the measured output voltage waveform is from linear increase, saturation, reduction to reversion and increase again as the input power increases. Permanent damage occurs to the BJT when the input power is high enough. The 3-D simulation model is established with Technology Computer Aided Design (TCAD) to further analyze the nonlinear and damage properties of the Si BJT injected with MWPs. The simulation results match with the experimental results.