A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications

This brief presents the implementation and measurement results of a CMOS broadband linear power amplifier (PA) for long-term evolution (LTE) applications. Interstage matching considering the main's source and the driver's load impedances is analyzed for broadband linear output power. The proposed PA is fabricated in standard 0.11-μm RF CMOS technology. The PA achieves linear output power of 27.9-27.3 dBm and power-added efficiency of 33%-26.1% under an adjacent channel power ratio (ACLR
_E-UTRA
) of -30 dBc for an LTE 16-QAM 10-MHz bandwidth signal with a carrier frequency range of 1.8-2.3 GHz.