Stability of Amorphous Indium–Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

Amorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V
_O
-V
_O
⁺
and V
_O
-V
_O
²⁺
under different wavelength illuminations.