Formation and characterization of III-V native oxides for optoelectronic applications

Data are presented on the electrical and optical characteristics of heterostructures grown by metalorganic chemical vapor deposition (MOCVD) both before and after oxidation. We have studied GaAs and InGaP doped and undoped "active" layers having various native-oxide "cladding layers" produced by the steam oxidation of AlGaAs and InAlP "window" layers. The optical properties of the heterostructures have been studied using 300 K and 4 K photoluminescence (PL) and cathodoluminescence (CL) and 300 K time-resolved PL.