High-performance of asymmetric FET-based plasmonic THz detector with vertically-integrated antenna in 65-nm CMOS technology

In this paper, we report the high-performance plasmonic terahertz (THz) detector based on antenna-coupled asymmetric nano-CMOS structure. For maximizing performance enhancement by nano-CMOS technology, asymmetric MOSFET is newly designed on a self-aligned gate structure and vertically-integrated patch antenna in 65-nm CMOS technology. Finally, we obtained the highly enhanced detection performance with responsivity (Rv) of 1.5 kV/W and noise-equivalent-power (NEP) of 15 pW/Hz05 at 0.2 THz.