The turnoff transient of the bipolar-mode field-effect transistor

A model of the turnoff transient of the field-effect transistor, operated in the bipolar mode (BMFET), is developed. It is shown that the transient consists of two parts pertaining to the two-carrier and to the one-carrier operations of the device, respectively, the former being much slower than the latter. The model allows the prediction of the switching transient from the basic device parameters; thus, it allows an understanding of the underlying physics of BMFET operation and why the BMFET is faster than other bipolar devices. The mode has also been found to be in good quantitative agreement with experiments, and thus it is a useful tool for the design of the BMFET.<
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