Evolution of morphological characteristics of Si:H p-i-n structures deposited by plasma on “corning” substrates

In this work we present a study of morphological characteristics evolution in the various layers comprising a Si:H p-i-n structure, which are deposited by PECVD on “Corning” glass substrates coated with transparent conductive Al-doped zinc oxide (AZO). AFM measurements were conducted over area of 2 × 2 μm
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to determine morphological characteristics of the substrates, carbon layer, p-layer, as well as intrinsic layer and finally the n-layer. AFM study of surface morphology showed that average height, kurtosis and rms roughness changed with the same tendency as the subsequent layers were deposited, while skewness showed opposite behavior. The maximum value of roughness is 3.14 nm for AZO layer and the lowest roughness value of 2.23 nm was achieved in the n-type layer.