Effect of hydrogen dilution on morphology and electronic properties of silicon-germanium films deposited by RF plasma discharge

In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for characterization. Dark conductivity and Fermi energy varied from 10
^-8
Ω
^-1
cm
^-1
to 10
^-4
Ω
^-1
cm
^-1
and from 0.45 to 0.08 eV, respectively, with changing hydrogen dilution from R
_H
=9 to.80.