A novel GaP/InGaAs/InGaSb triple junction photovoltaic cell with optimized quantum efficiency

The third generation photovoltaic technology mandates high efficiency and low cost. Efficiency will increase when the absorber becomes capable of absorbing more photons, leading to formation of excitons in the absorber. The proposed GaP/InGaAs/InGaSb triple junction solar cell is designed to convert more incident photons to electricity, executing higher internal quantum efficiency (IQE), promoting higher efficiency solar cells. The use of InGaSb (0.54 eV) as a bottom subcell layer empowers the collection of photons deeper in infrared spectrum. This paper presents the result of QE vs. wavelength of each subcell layer. We optimized IQE vs. wavelength by varying different parameters like thicknesses and diffusion lengths to attain higher efficiency and making the solar cells more cost-effective.