Electrical simulation of Ni/4H-SiC Schottky diodes before and after low energy electron radiation

In this paper simulation on the effects of low energy electron radiation and high temperature on the current-voltage (I-V) characteristics of Ni/4H-SiC Schottky diode were investigated. I-V characteristics of the Ni/4H-SiC Schottky diode were simulated based on thermionic emission theory using Silvaco Atlas Technology-computer-aided-design (TCAD) simulation tool. It was found the decrease in the forward bias (FB) current at high voltages is due to the increase of series resistance. However, reverse bias (RB) current did not change after radiation. From the temperature dependence I-V ranging from temperature range of 298-448 Kelvin (K), the schottky barrier height Φ
_b
, saturation current I
_s
and series resistance R
_s
are found to be temperature dependent, while ideality factor n remained constant.