Performance prospect of graphene barristor with high on-off ratio (∼107)

The graphene barristor is a promising device enabling high on-off ratio switching over 10
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using a graphene FET. In this work, a semi-empirical device model for the graphene barristor has been developed using the physical parameters extracted from the graphene barristors fabricated on a lightly doped silicon substrate. Then, the ultimate performance limit and benefits of barristors were explored by varying the device parameters. The barristor showed a promising performance, but the scalability requires a creative solution for the device structure to maximize the current injection area.