Design of W-band high-isolation T/R switch

This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation performance, the parallel inductor and leakage cancellation technique are adopted. The measurement results show that the designed switch has a good performance in the return loss, insertion loss and isolation in W-band 75–110GHz frequency band. Compared with reported works, the designed switch has the best isolation performance of 48 dB at 94-GHz.