GaN based wideband T/R module for multi-function applications

The next generation of AESA antennas will be challenged with the need for enabling a combination of different operating modes within the same antenna front end, including radar, communication (data links), and jamming (electronic warfare, EW). This leads to enhanced demands especially with regard to the usable RF bandwidth. One main step to overcome this is the use of disruptive semiconductor materials for RF MMICs. As the RF section of today's T/R modules for AESA applications is typically based on GaAs technology, GaN and SiGe BiCMOS will challenge or even replace it, here. This paper will describe the design of a GaN-based T/R module using all-European MMICs and covering the X-band from 8 to 12 GHz and its realisation at Airbus Defence and Space in Ulm. It will show some measurement results and give an impression on achieved performance. Further this paper shall describe potential next steps and give an outlook towards future developments.