Modeling the evolution of conducted EMI of a buck converter after N-MOS transistor aging

In this paper, we propose a method to model the Conducted ElectroMagnetic Interference variation (ACEMI) generated by a DC / DC converter based on a MOSFET according to an accelerated aging time. A relation between the ACEMI and the threshold voltage variation (AV
tn
) is determined by simulation, using a SPICE MOSFET model. Through the literature researches and the measurements we determine the equation that express the AV
th
according the aging time (T). Thereafter, a comparison between the simulation results and the experimental results are presented in order to validate the proposed model that relates the ACEMI to the aging time (T). This model has been developed to predict the ACEMI generated by a buck converter using a power MOSFET.