Optimization of gate controlled diode in rectenna for high efficiency RF energy harvesting

It was confirmed with 500MHz measurement that the Vth-adjusted GCD overcomes the best SBD, especially on the low input power. We propose the rectenna which is composed of the Vth-adjusted GCD and the high impedance antenna. The optimization study with ADS simulations which GCD's I-V's were verified, shows the optimum Vth and the gate width of the transistor in the GCD shift with the antenna impedance. It also shows that the expected efficiency of our rectenna could achieve around 40% at the antenna input power of -15dBm, and around 10% at -30dBm. It will be a promising rectenna on high efficiency “cold start” rectification of the ultralow input RF energy harvesting.